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PDS3808 |
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| Part Number | PDS3808 |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
30V,9A, RDS(ON) =11mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available Dual SOP8 Pin Configuration D2 D2 D1 D1 D1 G1 G2 G1S2 S1 S1 G2 Applications D2 MB / VGA / Vcore POL Applications SMPS 2nd SR S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Power Dissipation (T... |
| Document |
 PDS3808 Data Sheet
PDF 707.71KB |
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