MSS60-148-H20 |
Part Number | MSS60-148-H20 |
Manufacturer | MA-COM |
Description | The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained w... |
Features |
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode. Rev. V1 Beam Lead Electrical Specifications: TA = 25°C Model Configuration VF Typ. V MSS60-144-B10B Single Junction 625 MSS60-148-B10B Single Junction 625 MSS60-153-B10B Single Junction 625 ... |
Document |
MSS60-148-H20 Data Sheet
PDF 613.08KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | MSS60-148-B10B |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
2 | MSS60-148-E25 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
3 | MSS60-144-B10B |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
4 | MSS60-144-E25 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
5 | MSS60-144-H20 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes |