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BC848BWT1 |
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| Part Number | BC848BWT1 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846AWT1/D General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are... |
| Features |
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mA) Collector – Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector – Base Breakdown Voltage (IC = 10 mA) Emitter – Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR –5 = 1.0 x 0.75 x 0.062 in BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Ser... |
| Document |
 BC848BWT1 Data Sheet
PDF 207.09KB |
| Distributor | Stock | Price | Buy |
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