Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2N6851 |
Click to view a larger image
| Part Number | 2N6851 |
| Manufacturer | TEMIC |
| Description | P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –200 rDS(on) (W) 0.80 ID (A) –4.0 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S ... |
| Features |
ck document #1490.
Siliconix
1
P-37010—Rev. A, 06-Jun-94
2N6851
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Dynamic
Symbol
V(BR)DSS VGS(th)
IGSS IDSS ID(on) rDS(on) gfs
Test Condition
VGS = 0 V, ID = –1000 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –160 V, VGS = 0 V VDS = –160 V, VGS = 0 V, TJ = 125_C VDS = –3.3 V, VGS = –10 V VGS = –10 V, ID = –2.4 A VGS = –10 V, I... |
| Document |
 2N6851 Data Sheet
PDF 51.45KB |
| Distributor | Stock | Price | Buy |
|---|
