BC817-25W Infineon Technologies AG NPN Silicon AF Transistors Datasheet, en stock, prix

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BC817-25W

Infineon Technologies AG
BC817-25W
BC817-25W BC817-25W
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Part Number BC817-25W
Manufacturer Infineon (https://www.infineon.com/) Technologies AG
Description BC817W, BC818W NPN Silicon AF Transistors  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage  Complementary types: BC807W, BC808W (P...
Features Nov-29-2001 BC817W, BC818W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V h FE-grp.16 h FE-grp.25 h FE-grp.40 DC current gain 1) IC = 300 mA, VCE = 1 V hFE-grp.16 hFE-grp.25 hFE-grp.40...

Document Datasheet BC817-25W Data Sheet
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