BC338 Diotec Semiconductor Si-Epitaxial PlanarTransistors Datasheet, en stock, prix

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BC338

Diotec Semiconductor
BC338
BC338 BC338
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Part Number BC338
Manufacturer Diotec Semiconductor
Description BC337 / BC338 BC337 / BC338 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2006-05-30 Power dissipation Verlustleistung CBE...
Features 25°C) BC337 BC338 50 V 30 V 45 V 25 V 5V 625 mW 1) 800 mA 1A 100 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain
  – Kollektor-Basis-Stromverhältnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE VCE = 1 V, IC = 300 mA Group -16 Group -25 Group -40 hFE hFE hFE Collector-Emitter saturation voltage
  – Kollektor-Emitter-Sättigungsspg. 2) IC = 500 mA, IB = 50 mA VCEsat Kennwerte (Tj = 25°C) Min. Typ. Max. 100 160 250 160 250 400 250 400 630 60 130 100 200 170 320
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  – 0.7 V 1 Valid, if leads are kept at ambient temperat...

Document Datasheet BC338 Data Sheet
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