BCW60FN |
Part Number | BCW60FN |
Manufacturer | Siemens Semiconductor Group |
Description | NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Compleme... |
Features |
t Rth JA Rth JS
≤ ≤
Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32
Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 60 BCX 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 60, BCW 60 FF BCX 70 Collector-base breakdown voltage IC = 10 µA BCW 60, BCW 60 FF BCX 70 Emitter-base breakdown voltage IE = 1 µA Collector cutof... |
Document |
BCW60FN Data Sheet
PDF 282.21KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BCW60FF |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) | |
2 | BCW60FF |
Infineon Technologies AG |
NPN Silicon AF Transistors | |
3 | BCW60FN |
Infineon Technologies AG |
NPN Silicon AF Transistors | |
4 | BCW60 |
NXP |
NPN general purpose transistors | |
5 | BCW60 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |