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NCE01H13WD |
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| Part Number | NCE01H13WD |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE01H13WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Pb Free Product NCE01H13WD General Feat... |
| Features |
● VDS =100V,ID =130A RDS(ON) <6.8mΩ @ VGS=10V (Typ:5.2mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-263T-2L top view 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking NCE01H13WD Device NCE01H13WD Device Package... |
| Document |
 NCE01H13WD Data Sheet
PDF 309.42KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE01H13 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 2 | NCE01H13D |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE01H10 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE01H10D |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE01H11 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|