NCE30H32WD NCE Power Semiconductor N-Channel Enhancement Mode Power MOSFET Datasheet, en stock, prix

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NCE30H32WD

NCE Power Semiconductor
NCE30H32WD
NCE30H32WD NCE30H32WD
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Part Number NCE30H32WD
Manufacturer NCE Power Semiconductor
Description The NCE30H32WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V ,ID =320A RD...
Features
● VDS =30V ,ID =320A RDS(ON) < 1.6mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-263T-2L top view 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking NCE30H32WD Device NCE30H32WD Device Package TO-263T-2L ...

Document Datasheet NCE30H32WD Data Sheet
PDF 344.84KB
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