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BCV62B |
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| Part Number | BCV62B |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BCV62 PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and VBE matching High current gain Low collector-emitter saturation voltage C1 (2) C2 (1) 3 4 2 1 Tr.1... |
| Features |
V62
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics of T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 0.1 mA, VCE = 5 V DC current gain 1) IC = 2 mA, VCE = 5 V BCV62A BCV62B BCV62C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation v... |
| Document |
 BCV62B Data Sheet
PDF 49.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCV62 |
NXP |
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| 2 | BCV62 |
Siemens Semiconductor Group |
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| 3 | BCV62 |
Infineon Technologies AG |
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| 4 | BCV62 |
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| 5 | BCV62 |
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