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BCV62B |
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| Part Number | BCV62B |
| Manufacturer | Siemens Semiconductor Group |
| Description | PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 62 Type BCV 62 A BC... |
| Features |
tor Group
1
5.91
BCV 62
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C DC current gain1) IC = 0.1 mA, VCE = 5 V IC = 2 mA, VCE = 5 V V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 – – hFE BCV 62 A BCV 62 B BCV 62 C VCEsat – – VBEsat – – VBE 600 – 650 – 750 820 700 850 – – 75 250 300 650 100... |
| Document |
 BCV62B Data Sheet
PDF 94.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCV62 |
NXP |
PNP general purpose double transistor |
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| 2 | BCV62 |
Siemens Semiconductor Group |
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
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| 3 | BCV62 |
Infineon Technologies AG |
PNP Silicon Double Transistor |
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| 4 | BCV62 |
Kexin |
PNP general purpose double transistor |
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| 5 | BCV62 |
nexperia |
PNP general-purpose double transistors |
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