BCR108T |
Part Number | BCR108T |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | BCR108.../SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 =2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) inte... |
Features |
MH10, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W SEMH10
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 10 100 200 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300
°C
Unit K/W
2
Jun-14-2004
BCR108.../SEMH10
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC... |
Document |
BCR108T Data Sheet
PDF 491.12KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BCR108 |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor | |
2 | BCR108 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
3 | BCR108F |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
4 | BCR108L3 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
5 | BCR108S |
Siemens Semiconductor Group |
NPN Silicon Digital Transistor |