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BFP182W |
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| Part Number | BFP182W |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and ... |
| Features |
dering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit K/W
1 2013-07-25
BFP182W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V, pulse measured
V(BR)CEO 12
-
-V
ICES
- - 100 µA
ICBO
-... |
| Document |
 BFP182W Data Sheet
PDF 537.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFP182 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP182 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 3 | BFP182R |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 4 | BFP182R |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 5 | BFP182T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|