BFP182R |
Part Number | BFP182R |
Manufacturer | Siemens Semiconductor Group |
Description | BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive devic... |
Features |
Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 10 mA, VCE = 8 V
Semiconductor Group
2
Jan-21-1997
BFP 182R
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
6 8 0.27 0.27 0.6 -
GHz pF 0.45 dB 1.2 1.9 ... |
Document |
BFP182R Data Sheet
PDF 58.01KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BFP182 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP182 |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
3 | BFP182R |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
4 | BFP182T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
5 | BFP182TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |