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MMBT5551 |
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| Part Number | MMBT5551 |
| Manufacturer | Formosa MS |
| Description | SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) Formosa MS FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching MARKING: G1 SOT-23 1. BASE 2. E... |
| Features |
z Complementary to MMBT5401 z Ideal for medium power amplification and switching
MARKING: G1
SOT-23
1. BASE 2. EMITTER - 3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 180 160
6 0.6 300 150 -55-150
Units V V V A
mW
℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Coll... |
| Document |
 MMBT5551 Data Sheet
PDF 292.85KB |
| Distributor | Stock | Price | Buy |
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