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TC58FVB641 |
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| Part Number | TC58FVB641 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641/B641 ... |
| Features |
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.
FEATURES
• Power supply voltage • Block erase architecture VDD = 2.7 V~3.6 V • Operating temperature Ta = −40°C~85°C • Organization 8M × 8 bits / 4M × 16 bits • Functions Simultaneous Read/Write Auto Program, Auto Erase 8 × 8 Kbytes / 127 × 64 Kbytes... |
| Document |
 TC58FVB641 Data Sheet
PDF 603.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TC58FVB004 |
Toshiba |
4M (512K x 8) BIT CMOS FLASH MEMORY |
|
| 2 | TC58FVB160 |
Toshiba |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY |
|
| 3 | TC58FVB160A |
Toshiba Semiconductor |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
| 4 | TC58FVB321 |
Toshiba |
32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY |
|
| 5 | TC58FVB400 |
Toshiba Semiconductor |
(TC58Fxxx) 4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY |
|