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CS10J60FA9 |
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| Part Number | CS10J60FA9 |
| Manufacturer | HUAJING MICROELECTRONICS |
| Description | CS10J60F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. Th... |
| Features |
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
600 V 10 A 25 W 0.6 Ω
Symbol Parameter
VDSS
ID IDMa1 VGS EAS a2 dv/dta3
PD TJ，Tstg
TL
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Operating Juncti... |
| Document |
 CS10J60FA9 Data Sheet
PDF 407.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS10J60A3-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 2 | CS10J60A4-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 3 | CS10J65A0-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 4 | CS10J65A3 |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 5 | CS10J65A4 |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|