CS10J65A4 |
Part Number | CS10J65A4 |
Manufacturer | HUAJING MICROELECTRONICS |
Description | CS10J65 A4, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The... |
Features |
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications:
l Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
650 V 10 A 62 W 0.62 Ω
Symbol Parameter
VDSS
ID IDMa1 VGS EAS a2 dv/dta3
PD TJ,Tstg
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Operating Junction a... |
Document |
CS10J65A4 Data Sheet
PDF 408.66KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CS10J65A0-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
2 | CS10J65A3 |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
3 | CS10J65FA9 |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
4 | CS10J65FA9-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
5 | CS10J60A3-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |