HPA700R1K3SA |
Part Number | HPA700R1K3SA |
Manufacturer | HUAJING MICROELECTRONICS |
Description | HPA700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. T... |
Features |
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
700 V 6A 25 W
0.95 Ω
Symbol Parameter
VDSS
ID IDMa1 VGSS EAS a2 dv/dta3
PD TJ,Tstg
TL
Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation(T=25°C... |
Document |
HPA700R1K3SA Data Sheet
PDF 403.15KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HPA72R |
Sanyo Semicon Device |
Very High-Definition Color Display/ Horizontal Deflection Output Applications | |
2 | HPA-8003 |
ETC |
HPA-8003 H-Plane Array | |
3 | HPA100 |
Sanyo Semicon Device |
Very High-Definition Color Display/ Horizontal Deflection Output Applications | |
4 | HPA100R |
Sanyo Semicon Device |
Very High-Definition Color Display/ Horizontal Deflection Output Applications | |
5 | HPA150 |
Sanyo Semicon Device |
Very High-Definition Color Display/ Horizontal Deflection Output Applications |