HPA700R1K3SA HUAJING MICROELECTRONICS Silicon N-Channel Power MOSFET Datasheet, en stock, prix

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HPA700R1K3SA

HUAJING MICROELECTRONICS
HPA700R1K3SA
HPA700R1K3SA HPA700R1K3SA
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Part Number HPA700R1K3SA
Manufacturer HUAJING MICROELECTRONICS
Description HPA700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. T...
Features l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): 700 V 6A 25 W 0.95 Ω Symbol Parameter VDSS ID IDMa1 VGSS EAS a2 dv/dta3 PD TJ,Tstg TL Drain-to-Source Voltage(VGS=0V) Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation(T=25°C...

Document Datasheet HPA700R1K3SA Data Sheet
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