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ME35N06T-G |
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| Part Number | ME35N06T-G |
| Manufacturer | Matsuki |
| Description | The ME35N06T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on st... |
| Features |
● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter e Ordering Information: ME35N06T (Pb-free) ME35N06T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operating Junction Temperature ... |
| Document |
 ME35N06T-G Data Sheet
PDF 702.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ME35N06T |
Matsuki |
N-Channel 60V (D-S) MOSFET |
|
| 2 | ME35N06 |
Matsuki |
N-Channel 60V (D-S) MOSFET |
|
| 3 | ME35N06-G |
Matsuki |
N-Channel 60V (D-S) MOSFET |
|
| 4 | ME35N06F |
Matsuki |
N-Channel 60V (D-S) MOSFET |
|
| 5 | ME35N06F-G |
Matsuki |
N-Channel 60V (D-S) MOSFET |
|