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1SS352 |
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| Part Number | 1SS352 |
| Manufacturer | Kexin |
| Description | SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION DIODE 1SS352 Features Small Package Low forward voltage :VF(3) = 0.98 (Typ) Fast reverse recovery time :trr = 1.6ns (Typ) Small total cap... |
| Features |
Small Package
Low forward voltage
:VF(3) = 0.98 (Typ)
Fast reverse recovery time :trr = 1.6ns (Typ)
Small total capacitance
:CT = 0.5 pF(Typ)
SOD-323
1.7+0.1 -0.1
Unit: mm 0.85+0.05
-0.05
+0.050.3 -0.05
+0.11.3 -0.1
2.6+0.1 -0.1
0.475
0.375
1.0max
+0.050.1 -0.02
Absolute Maximum Ratings Ta = 25
P arem eter
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR 80
V
Forward current
IFM 200 mA
maximum (peak) voltage current
Io 100 mA
Surge current t=1s
IFSM
1
A
Power dissipation
P
200(*)
mW
Junction Temperature
Tj 125
Storage Temper... |
| Document |
 1SS352 Data Sheet
PDF 29.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS350 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 2 | 1SS351 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 3 | 1SS351 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 4 | 1SS352 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 5 | 1SS352 |
SEMTECH |
Silicon Epitaxial Planar Switching Diode |
|