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1SS352 |
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| Part Number | 1SS352 |
| Manufacturer | GME |
| Description | Silicon Epitaxial Planar Diode FEATURES z Small package z Low forward voltage z Fast reverse recovery time z Small total capacitance Pb Lead-free Production specification 1SS352 APPLICATIONS z Hig... |
| Features |
z Small package z Low forward voltage z Fast reverse recovery time z Small total capacitance
Pb
Lead-free
Production specification
1SS352
APPLICATIONS
z High speed switching
ORDERING INFORMATION
Type No.
Marking
1SS352
C1
SOD-323
Package Code SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Peak reverse voltage DC Reverse Voltage Average Rectified Output Current Surge current(10ms) Power Dissipation Junction temperature Storage temperature
VRM VR IO IFSM PD Tj TSTG
85 80 100 1 200 125 -55 to +125
Unit V V mA A mW ℃ ℃
ELECTRICAL CHARACTERISTIC... |
| Document |
 1SS352 Data Sheet
PDF 114.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS350 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 2 | 1SS351 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 3 | 1SS351 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 4 | 1SS352 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 5 | 1SS352 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE |
|