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1SS357 |
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| Part Number | 1SS357 |
| Manufacturer | Kexin |
| Description | SMD Type Diodes LOW VOLTAGE HIGH SPEED SWITCHING 1SS357 Features Low forward voltage Low resistance current Small package: :VF(3) = 0.54 V(Typ) :IR = 5 A (Max) :SC-70 SOD-323 1.7+0.1 -0.1 Unit: ... |
| Features |
Low forward voltage Low resistance current Small package:
:VF(3) = 0.54 V(Typ) :IR = 5 A (Max)
:SC-70
SOD-323
1.7+0.1 -0.1
Unit: mm 0.85+0.05
-0.05
+0.050.3 -0.05
+0.11.3 -0.1
2.6+0.1 -0.1
0.475
0.375
1.0max
+0.050.1 -0.02
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR 80
V
Maximum (peak) forward current
IFM 200 mA
Average forward current
IO 100 mA
Surge current (10 ms)
IFSM
1
A
Power dissipation
P
200(*)
mW
Junction Temperature
Tj 125
Storage Temperature range
Tst g
-55 + 125
(*) M... |
| Document |
 1SS357 Data Sheet
PDF 28.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS350 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 2 | 1SS351 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 3 | 1SS351 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 4 | 1SS352 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 5 | 1SS352 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE |
|