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BUZ21 |
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| Part Number | BUZ21 |
| Manufacturer | Harris |
| Description | Semiconductor Data Sheet BUZ21 October 1998 File Number 2420.1 19A, 100V, 0.100 Ohm, N-Channel Power Features MOSFET [ /Title (BUZ21) This is an N-Channel enhancement mode silicon gate power fi... |
| Features |
MOSFET
[ /Title
(BUZ21)
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as
/Subject switching regulators, switching converters, motor drivers,
(19A, relay drivers, and drivers for high power bipolar switching
• 19A, 100V • rDS(ON) = 0.100Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds 100V, transistors requiring high speed and low gate drive power. 0.100 This type can be operated directly from integrated circuits. Ohm, N- Formerly developmental type TA9854. Channel Power Ordering Information • Linear Tra... |
| Document |
 BUZ21 Data Sheet
PDF 45.98KB |
| Distributor | Stock | Price | Buy |
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