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BFR182W |
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| Part Number | BFR182W |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and ... |
| Features |
the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
mA mW °C
Unit K/W
1 2014-04-07
BFR182W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 Collector-emitter cutoff current
VCE = 4 V, VBE = 0 VCE = 15 V, VBE = 0 V, TA = 85 °C (verified by random sampling)
V(BR)CEO 12
-
-V
ICES
nA - 1 30 - 5 70
Collector-base cutoff current VCB = 4 V, IE = 0 Emitter-base cut... |
| Document |
 BFR182W Data Sheet
PDF 661.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFR182 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
|
| 2 | BFR182 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFR182T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 4 | BFR182T |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 5 | BFR182TW |
INCHANGE |
NPN Transistor |
|