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BS108 |
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| Part Number | BS108 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS108/D Logic Level TMOS BS108 ® 1 DRAIN N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching a... |
| Features |
y Cycle 2.0%.
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TMOS is a registered trademark of Motorola, Inc.
© Motorola, Inc. 1997
BS108
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain –Source Breakdown Voltage (VGS = 0, ID = 10 µA) Zero Gate Voltage Drain Current (VDSS = 130 Vdc, VGS = 0) Gate –Body Leakage Current (VGS = 15 Vdc, VDS = 0) V(BR)DSS 200 IDSS — IGSSF — — 10 — 30 nAdc — — nAdc Vdc ON CHARACTERISTICS (2) Gate Threshold Voltage (ID = 1.0 mA, VDS = VGS) Static Drain –to –Source On –Resistance (VGS = 2.0 Vdc, ID = 50 mA) (VGS = 2.8 Vdc, ID = 100... |
| Document |
 BS108 Data Sheet
PDF 58.88KB |
| Distributor | Stock | Price | Buy |
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| 1 | BS1001-7R |
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| 2 | BS100C |
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| 3 | BS107 |
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| 4 | BS107 |
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| 5 | BS107 |
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