BR211SM-220 |
Part Number | BR211SM-220 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current together with high peak cu... |
Features |
bient temperature Overload junction temperature 10/320 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs Ta = 25˚C tp = 1 ms; Ta = 25˚C off-state on-state CONDITIONS MIN. - 40 MAX. 75% of V(BO)typ 40 15 1.1 50 1.2 50 150 70 150 UNIT V A A A2s A/µs W W ˚C ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-sp Rth j-a Zth j-a PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient Thermal impedance junction to ambient CONDITIONS MIN. pcb mounted; minimum footprint tp = 1 ms TY... |
Document |
BR211SM-220 Data Sheet
PDF 32.00KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BR211SM-200 |
NXP |
Breakover diodes | |
2 | BR211SM-240 |
NXP |
Breakover diodes | |
3 | BR211SM-260 |
NXP |
Breakover diodes | |
4 | BR211SM-280 |
NXP |
Breakover diodes | |
5 | BR211SM-140 |
NXP |
Breakover diodes |