BR211SM-220 NXP Breakover diodes Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

BR211SM-220

NXP
BR211SM-220
BR211SM-220 BR211SM-220
zoom Click to view a larger image
Part Number BR211SM-220
Manufacturer NXP (https://www.nxp.com/)
Description A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current together with high peak cu...
Features bient temperature Overload junction temperature 10/320 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs Ta = 25˚C tp = 1 ms; Ta = 25˚C off-state on-state CONDITIONS MIN. - 40 MAX. 75% of V(BO)typ 40 15 1.1 50 1.2 50 150 70 150 UNIT V A A A2s A/µs W W ˚C ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-a Zth j-a PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient Thermal impedance junction to ambient CONDITIONS MIN. pcb mounted; minimum footprint tp = 1 ms TY...

Document Datasheet BR211SM-220 Data Sheet
PDF 32.00KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 BR211SM-200
NXP
Breakover diodes Datasheet
2 BR211SM-240
NXP
Breakover diodes Datasheet
3 BR211SM-260
NXP
Breakover diodes Datasheet
4 BR211SM-280
NXP
Breakover diodes Datasheet
5 BR211SM-140
NXP
Breakover diodes Datasheet
More datasheet from NXP



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact