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BR211SM |
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| Part Number | BR211SM |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current together with high peak cu... |
| Features |
bient temperature Overload junction temperature 10/320 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs Ta = 25˚C tp = 1 ms; Ta = 25˚C off-state on-state CONDITIONS MIN. - 40 MAX. 75% of V(BO)typ 40 15 1.1 50 1.2 50 150 70 150 UNIT V A A A2s A/µs W W ˚C ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-sp Rth j-a Zth j-a PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient Thermal impedance junction to ambient CONDITIONS MIN. pcb mounted; minimum footprint tp = 1 ms TY... |
| Document |
 BR211SM Data Sheet
PDF 32.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BR211SM-140 |
NXP |
Breakover diodes |
|
| 2 | BR211SM-160 |
NXP |
Breakover diodes |
|
| 3 | BR211SM-180 |
NXP |
Breakover diodes |
|
| 4 | BR211SM-200 |
NXP |
Breakover diodes |
|
| 5 | BR211SM-220 |
NXP |
Breakover diodes |
|