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M58BW016DB |
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| Part Number | M58BW016DB |
| Manufacturer | Numonyx |
| Description | M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VD... |
| Features |
Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional) High performance – Access times: 70, 80 ns – 56 MHz effective zero wait-state burst read – Synchronous burst read – Asynchronous page read Hardware block protection – WP pin for write protect of the 2 outermost parameter blocks and all main blocks – RP pin for write protect of all blocks Optimized for FDI drivers – Fast program / erase suspend latency time < 6 µs – Common Flash interface Memory blocks – 8 parameters blocks (top or bottom) –... |
| Document |
 M58BW016DB Data Sheet
PDF 0.97MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M58BW016DB |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories |
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| 2 | M58BW016DT |
Numonyx |
16 Mbit 3V supply Flash memories |
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| 3 | M58BW016DT |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories |
|
| 4 | M58BW016BB |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories |
|
| 5 | M58BW016BT |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories |
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