BSR57 |
Part Number | BSR57 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are... |
Features |
Interchangeable drain and source connections Small package 1.3 Applications Low-power, chopper or switching applications Thick and thin-film circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage IDSS drain leakage current VDS = 15 V; VGS = 0 V; Tmb = 40 C VGSoff gate-source cut-off voltage VDS = 15 V; ID = 0.5 nA Crs feedback capacitance VDS = 0 V; VGS = 10 V; f = 1 MHz Switching time (VDD = 10 V; VGS = 0 V) toff turn-off time ID = 20 mA; VGSM = 10 V ID = 10 mA; VGSM = 6 V ID = 5 mA; VGSM = 4 V P... |
Document |
BSR57 Data Sheet
PDF 429.64KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSR50 |
Fairchild Semiconductor |
NPN Darlington Transistor | |
2 | BSR52 |
NXP |
NPN Darlington transistor | |
3 | BSR56 |
NXP |
N-channel FETs | |
4 | BSR56 |
Fairchild Semiconductor |
N-Channel Low-Frequency Low Noise Amplifier | |
5 | BSR57 |
Fairchild Semiconductor |
N-Channel Low-Frequency Low-Noise Amplifier |