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BUZ104L |
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| Part Number | BUZ104L |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUZ 104L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1... |
| Features |
ory, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 2.5 ≤ 75 E 55 / 175 / 56 K/W Unit °C
Tj Tstg RthJC RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
50 1.6 0.1 1 10 10 0.085 2 1 100 100 100
V
VGS = 0 V, ID = 0.25 mA, Tj = -40 °C
Gate threshold voltage
VGS(th)
1.2
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
µA nA µA nA Ω 0.1
VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C
Ga... |
| Document |
 BUZ104L Data Sheet
PDF 209.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ104 |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ104 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | BUZ104S |
Siemens Semiconductor Group |
Power Transistor |
|
| 4 | BUZ104SL |
Siemens Semiconductor Group |
Power Transistor |
|
| 5 | BUZ104SL-4 |
Siemens Semiconductor Group |
Power Transistor |
|