BUZ100 Siemens Semiconductor Group Power Transistor Datasheet, en stock, prix

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BUZ100

Siemens Semiconductor Group
BUZ100
BUZ100 BUZ100
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Part Number BUZ100
Manufacturer Siemens Semiconductor Group
Description BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BU...
Features 07/96 BUZ 100 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 1 10 10 0.013 4 1 100 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = -40 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA µA nA Ω 0.018 VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID...

Document Datasheet BUZ100 Data Sheet
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