BUT11A |
Part Number | BUT11A |
Manufacturer | NXP (https://www.nxp.com/) |
Description | High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 DESCRIPTI... |
Features |
igs 11 and 12 open base 400 450 1.5 5 10 100 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUT11 BUT11A VCEO collector-emitter voltage BUT11 BUT11A IC ICM IB IBM Ptot Tstg Tj collector current (DC) collector current (peak value) ba... |
Document |
BUT11A Data Sheet
PDF 96.62KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BUT11 |
NXP |
Silicon diffused power transistors | |
2 | BUT11 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTOR | |
3 | BUT11 |
TRSYS |
NPN SILICON POWER TRANSISTOR | |
4 | BUT11 |
Wing Shing Computer Components |
NPN SILICON TRANSISTOR | |
5 | BUT11 |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTOR |