BUT11A NXP Silicon diffused power transistors Datasheet, en stock, prix

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BUT11A

NXP
BUT11A
BUT11A BUT11A
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Part Number BUT11A
Manufacturer NXP (https://www.nxp.com/)
Description High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 DESCRIPTI...
Features igs 11 and 12 open base 400 450 1.5 5 10 100 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W 1997 Aug 13 1 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUT11 BUT11A VCEO collector-emitter voltage BUT11 BUT11A IC ICM IB IBM Ptot Tstg Tj collector current (DC) collector current (peak value) ba...

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