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GPT12N60D |
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| Part Number | GPT12N60D |
| Manufacturer | Greatpower |
| Description | FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is de... |
| Features |
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical a... |
| Document |
 GPT12N60D Data Sheet
PDF 1.17MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GPT12N60 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 2 | GPT12N45 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 3 | GPT12N45D |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 4 | GPT12N50 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 5 | GPT12N50D |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|