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MJD112 |
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| Part Number | MJD112 |
| Manufacturer | KEC |
| Description | SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Mi... |
| Features |
High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
DC
Collector Power Dissipation
Ta=25 Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO
IC
IB
PC
Tj Tstg
RATING 100 100 5 2 4 50 1.3 20 150
-55 150
UNIT V V V
A
mA
W
C B
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K
E
BD
M
I J
P L
O
DIM A B ... |
| Document |
 MJD112 Data Sheet
PDF 391.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD112 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 2 | MJD112 |
MCC |
Silicon NPN epitaxial planer Transistors |
|
| 3 | MJD112 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | MJD112 |
Fairchild Semiconductor |
NPN Silicon Darlington Transistor |
|
| 5 | MJD112 |
CDIL |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
|