Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
TIP112 |
Click to view a larger image
| Part Number | TIP112 |
| Manufacturer | KEC |
| Description | SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Sa... |
| Features |
High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117.
TIP112
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
DC
VCBO VCEO VEBO
IC ICP IB
100 100 5 2 4 50
Collector Power
Ta=25
2
PC
Dissipation
Tc=25
50
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -65 150
UNIT V V V
A
mA
W
EQUIVALENT CIRCUIT
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
... |
| Document |
 TIP112 Data Sheet
PDF 648.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP110 |
INCHANGE |
NPN Transistor |
|
| 2 | TIP110 |
MCC |
Silicon NPN Darlington Power Transistor |
|
| 3 | TIP110 |
RECTRON |
Power Transistors |
|
| 4 | TIP110 |
Motorola |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 5 | TIP110 |
Power Innovations Limited |
NPN SILICON POWER DARLINGTONS |
|