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V30M100M-E3 |
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| Part Number | V30M100M-E3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V30M100M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky tec... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V30M100M PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A (TA = 125 °C) TJ max. Package 2 x 15 A 100 V 120 A 0.70 V 175 °C TO-220AB Diode variations Common cathode TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery pro... |
| Document |
 V30M100M-E3 Data Sheet
PDF 95.38KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | V30M120C |
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| 2 | V30M120C-M3 |
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| 3 | V30M120CHM3 |
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| 4 | V30M120M-E3 |
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Dual High Voltage Trench MOS Barrier Schottky Rectifier |
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| 5 | V30MLA0603 |
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