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MMBT5401-G |
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| Part Number | MMBT5401-G |
| Manufacturer | Comchip |
| Description | General Purpose Transistor MMBT5401-G (PNP) RoHS Device Features -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switchi... |
| Features |
-Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching.
Diagram:
Collector 3
1 Base
Marking: 2L
2 Emitter
0.056(1.40) 0.047(1.20)
0.041(1.05) 0.035(0.90)
SOT-23
0.119(3.00) 0.110(2.80)
3
12
0.079(2.00) 0.071(1.80)
0.006(0.15) 0.002(0.05)
0.100(2.55) 0.089(2.25)
0.020(0.50) 0.012(0.30)
0.004(0.10) max 0.008(0.20) min
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-base voltage Collector-emitter voltage Emitter-base volt... |
| Document |
 MMBT5401-G Data Sheet
PDF 90.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMBT5401 |
GME |
NPN General Purpose Transistor |
|
| 2 | MMBT5401 |
Diodes Incorporated |
150V PNP HIGH-VOLTAGE TRANSISTOR |
|
| 3 | MMBT5401 |
Fairchild |
PNP General Purpose Amplifier |
|
| 4 | MMBT5401 |
UTC |
HIGH VOLTAGE SWITCHING TRANSISTOR |
|
| 5 | MMBT5401 |
ON Semiconductor |
PNP Epitaxial Silicon Transistor |
|