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MMBD2835 |
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| Part Number | MMBD2835 |
| Manufacturer | JR |
| Description | Silicon Epitaxial Planar Switching Diode MMBD2835, MMBD2836 Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed swit... |
| Features |
• Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Range 3 12 Marking Code: A1 SOT-23 Plastic Package MMBD2835 MMBD2836 Symbol VR IF Ptot Tj Tstg Value 35 75 100 350 150 - 55 to + 150 Unit V mA mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 50 mA at IF = 100 mA Reverse Current at VR = 30 V at VR = 50 V Reverse Break... |
| Document |
 MMBD2835 Data Sheet
PDF 379.57KB |
| Distributor | Stock | Price | Buy |
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