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1N3212 |
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| Part Number | 1N3212 |
| Manufacturer | GeneSiC |
| Description | Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anod... |
| Features |
• High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3212 thru 1N3214R VRRM = 400 V - 600 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3212 (R) 1N3213 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS V... |
| Document |
 1N3212 Data Sheet
PDF 682.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N3210 |
Vishay |
Silicon Rectifier Diodes |
|
| 2 | 1N3210 |
International Rectifier |
15 Amp Stud-mounted Silicon Rectifier Diodes |
|
| 3 | 1N3210 |
DACO SEMICONDUCTOR |
STANDARD RECOVERY DIODE |
|
| 4 | 1N3210 |
America Semiconductor |
Silicon Standard Recovery Diode |
|
| 5 | 1N3210 |
GeneSiC |
Silicon Standard Recovery Diode |
|