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TIP117 |
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| Part Number | TIP117 |
| Manufacturer | KEC |
| Description | SEMICONDUCTOR TECHNICAL DATA TIP117 EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES ᴌHigh DC Current Gain. : hFE=1000(Min.... |
| Features |
ᴌHigh DC Current Gain.
: hFE=1000(Min.), ᷤVCE=-4V, IC=-1A. ᴌLow Collector-Emitter Saturation Voltage. ᴌComplementary to TIP112.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
DC
VCBO VCEO VEBO
IC ICP IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
Junction Temperature
PC Tj
Storage Temperature Range
Tstg
RATING -100 -100 -5 -2 -4 -50 2 50 150
-65ᴕ150
UNIT V V V
A
mA
W
ᴱ ᴱ
E Q
H
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
P
DIM A... |
| Document |
 TIP117 Data Sheet
PDF 73.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP110 |
INCHANGE |
NPN Transistor |
|
| 2 | TIP110 |
MCC |
Silicon NPN Darlington Power Transistor |
|
| 3 | TIP110 |
RECTRON |
Power Transistors |
|
| 4 | TIP110 |
Motorola |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 5 | TIP110 |
Power Innovations Limited |
NPN SILICON POWER DARLINGTONS |
|