Features
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te-SourceLeakageCurrent
IGSS VGS= ±30V,VDS=0V
ForwardTransconductance
gfs ID= 30A,VDS=10V
StaticDrain-SourceOn-stateResistance
R(DS)ON
ID= 30A,VGS=10V
GateThressholdVoltage
VTH ID= 3mA,VDS=10V
Source-DrainDiodeForwadeVoltage
VSD
IS= 30A,VGS=0V
ThermalResistance
θjc
Junctiontocase
TotalGateCharge
Qg VGS=10V,ID= 60A,VDD=400V
InputCapacitance
Ciss
ReverseTransferCapacitance
Crss VDS= 100V,VGS=0V,f=1MHz
OutputCapacitance
Coss
Turn-ondelaytime
td(on)
Risetime
tr ID= 30A,VDD=150V,RL= 5Ω
Turn-offdelaytime
td(off) VGS(+)= 10V,VGS(-)= 0V
Falltime
tf
Ratings...
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