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EMD04N06E |
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| Part Number | EMD04N06E |
| Manufacturer | Excelliance MOS |
| Description | EMD04N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.8mΩ ID 155A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Fre... |
| Features |
W
2017/9/28 p.1
EMD04N06E
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
DYNAMIC
60
V
23
4
... |
| Document |
 EMD04N06E Data Sheet
PDF 248.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMD04N06A |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMD04N06F |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMD04N06FN |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMD04N06H |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMD04N04E |
Excelliance MOS |
MOSFET |
|