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EMD04N08E |
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| Part Number | EMD04N08E |
| Manufacturer | Excelliance MOS |
| Description | EMD04N08E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 4.6mΩ ID 160A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Fre... |
| Features |
2017/9/28 p.1
EMD04N08E
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 64V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 50A
VDS = 5V, ID = 50A
DYNAMIC
80
V
2.0 3.0... |
| Document |
 EMD04N08E Data Sheet
PDF 247.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMD04N08FN |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |
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| 2 | EMD04N04E |
Excelliance MOS |
MOSFET |
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| 3 | EMD04N04H |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |
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| 4 | EMD04N06A |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |
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| 5 | EMD04N06E |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |
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