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EMD12N10E |
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| Part Number | EMD12N10E |
| Manufacturer | Excelliance MOS |
| Description | EMD12N10E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 11.5mΩ ID 95A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Fr... |
| Features |
2015/10/12 p.1
EMD12N10E
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 80V, VGS = 0V VDS = 70V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 32A
VDS = 5V, ID = 32A
DYNAMIC
100
V
2.0 3... |
| Document |
 EMD12N10E Data Sheet
PDF 225.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMD12N10H |
Excelliance MOS |
MOSFET |
|
| 2 | EMD12N06A |
Excelliance MOS |
MOSFET |
|
| 3 | EMD12N06H |
Excelliance MOS |
MOSFET |
|
| 4 | EMD12N60F |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMD12 |
Rohm |
Power management (dual digital transistors) |
|