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EMD04N10E |
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| Part Number | EMD04N10E |
| Manufacturer | Excelliance MOS |
| Description | N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 4.5mΩ 6.0mΩ ID @TC=25℃ 171.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪A... |
| Features |
mbient3
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test
TYPICAL
2020/7/20 A.1
EMD04N10E
LIMITS
±20 171 108 16 12 543 100 500.0 250.0 227.3 90.9
2 1.3 -55 to 150
UNIT V
A
mJ W W °C
MAXIMUM
0.55 62.5
UNIT °C/W
P.1
EMD04N10E
▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS MIN
STATIC
Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4
On-State Drain Current1 Dr... |
| Document |
 EMD04N10E Data Sheet
PDF 467.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMD04N04E |
Excelliance MOS |
MOSFET |
|
| 2 | EMD04N04H |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMD04N06A |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMD04N06E |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMD04N06F |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|