Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
TSA16N50M |
Click to view a larger image
| Part Number | TSA16N50M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 16.0A,500V,Max.RDS(on)=0.38Ω @ VGS =10V • Low gate charge(typical 45nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS EAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC = 25℃ TC = 100℃ (Note 1) (Note 2) ... |
| Document |
 TSA16N50M Data Sheet
PDF 339.68KB |
| Distributor | Stock | Price | Buy |
|---|
