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TSA10N80M |
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| Part Number | TSA10N80M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 10.0A, 800V, RDS(on) = 1.10Ω @VGS = 10 V • Low gate charge ( typical 45nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability G DS TO-3P or TO247 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Aval... |
| Document |
 TSA10N80M Data Sheet
PDF 224.53KB |
| Distributor | Stock | Price | Buy |
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