SLD2N65UZ |
Part Number | SLD2N65UZ |
Manufacturer | Maple Semiconductor |
Description | This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi... |
Features |
- 1.9A, 650V, RDS(on)typ = 3.45Ω@VGS = 10 V - Low gate charge ( typical 5.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
D
GS
D-PAK
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
S
Symbol
Parameter
SLD2N65UZ / SLU2N65UZ
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(N... |
Document |
SLD2N65UZ Data Sheet
PDF 909.27KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLD2N60UZ |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLD20-018 |
Littelfuse |
TVS Diodes | |
3 | SLD2083CZ |
sirenza |
10 Watt high performance LDMOS transistor designed | |
4 | SLD20A |
MCC |
6000Watt Transient Voltage Suppressors | |
5 | SLD20CA |
MCC |
6000Watt Transient Voltage Suppressors |