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MT30N03 |
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| Part Number | MT30N03 |
| Manufacturer | MOS-TECH |
| Description | MOS-TECH Semiconductor Co.,LTD MT30N03 N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● ... |
| Features |
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 30A 11@ VGS=10V 17@ VGS=4.5V NOTE：The MT50N03 is available in a lead-free package ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit 30 ±20 30 - Pulse d b IDM 90 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG 30 50 -55 to 175 Unit V ... |
| Document |
 MT30N03 Data Sheet
PDF 267.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
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MOS-TECH |
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| 2 | MT30210 |
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| 3 | MT30310 |
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| 4 | MT30320 |
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| 5 | MT30330 |
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